![A simple model for the equivalent circuit of heavily irradiated Si diodes in standard CV measurements D.Campbell, A.Chilingarov, T.Sloan Lancaster University, - ppt download A simple model for the equivalent circuit of heavily irradiated Si diodes in standard CV measurements D.Campbell, A.Chilingarov, T.Sloan Lancaster University, - ppt download](https://images.slideplayer.com/38/10815319/slides/slide_4.jpg)
A simple model for the equivalent circuit of heavily irradiated Si diodes in standard CV measurements D.Campbell, A.Chilingarov, T.Sloan Lancaster University, - ppt download
![Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that](https://dwes9vv9u0550.cloudfront.net/images/5154224/211e1499-4f7e-4ceb-94b0-18bb47dea849.jpg)
Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that
![Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V(0) changes by Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V(0) changes by](https://d10lpgp6xz60nq.cloudfront.net/web-thumb/14533235_web.png)