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The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability | SpringerLink
The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability | SpringerLink
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Improved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode - Kotamraju - 2020 - IET Circuits, Devices & Systems - Wiley Online Library
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The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability | SpringerLink
