Significant Improvement of Switching Characteristics in a 1.2‐kV SiC SWITCH‐MOS by the Application of Kelvin Source Connection - Matsui - 2023 - IEEJ Transactions on Electrical and Electronic Engineering - Wiley Online Library
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Advantage of the use of an added driver source lead in discrete Power MOSFETs
Commercialization of new TO-247-4L packaging 600-V Super Junction Power MOSFET (DTMOSIV-H Series) | Toshiba Electronic Devices & Storage Corporation | Americas – United States