On the Band Structure of Ultrathin Layer Semiconductor Superlattices
Interface-induced lateral anisotropy of semiconductor heterostructures M.O. Nestoklon, Ioffe Physico-Technical Institute, St. Petersburg, Russia JASS ppt download
Optical trapping with Bessel beams generated from semiconductor lasers
Band structure and carrier concentration of Indium Arsenide (InAs)
Structural and Optical Properties of Alternately-Strained ZnSxSe1−x/CdSe Superlattices with E ective Band-Gap 2.5 2.6 eV
ATE Central - Semiconductors on NSM
Temperature dependence of the threshold current of QW lasers
Handbook Series on Semiconductor Parameters
NSM Archive - Diamond (C) - Band structure and carrier concentration
Band structure and carrier concentration of Gallium Arsenide (GaAs)
Development of detectors based on binary semiconductors in Ioffe Physico-Technical Institute
SEMICONDUCTORS AND DIELECTRICS
The calculated Ioffe-Regel critical density of Si- MOSFET as a function... | Download Scientific Diagram
REVIEW Chalcogenide passivation of III–V semiconductor surfaces
Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densiti
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
Polarization studies of the photoelectric properties of II–IV–V2- semiconductor-compound–electrolyte systems
NSM Archive - Band structure and carrier concentration of Silicon (Si)
Semiconductor Parameters | PDF | Band Gap | Electrical Resistivity And Conductivity
MRS Internet Journal Research Nitride Semiconductor
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
