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RF-to-DC Direct Power Conversion of AlGaAs/GaAs Schottky Diode for On-Chip Rectenna Device Application in Nanosystems - SciAlert Responsive Version
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![SOLVED: (20 pts total) Consider Schottky barrier diode with an n-type GaAs layer: GaAs has an intrinsic carricr concentration n, 0f 2.1 10" cm electron affinity, 9X, of 41 eV, bandgap, E, SOLVED: (20 pts total) Consider Schottky barrier diode with an n-type GaAs layer: GaAs has an intrinsic carricr concentration n, 0f 2.1 10" cm electron affinity, 9X, of 41 eV, bandgap, E,](https://cdn.numerade.com/ask_images/383ae4890f7d456aaae495acc46fb03f.jpg)
SOLVED: (20 pts total) Consider Schottky barrier diode with an n-type GaAs layer: GaAs has an intrinsic carricr concentration n, 0f 2.1 10" cm electron affinity, 9X, of 41 eV, bandgap, E,
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